2SD1393 - INCHANGE

2SD1393 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 0.8A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2.

Features

e specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A, IB= 3mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V ICBO Collector Cutoff Current VCB= 50V, IE= 0 MIN TYP. MAX UNIT 50 V 2.0 V 2.5 V 0.1 mA ICEO Collector Cutoff Current VCE= 50V, IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE-1 DC Current Gain IC= 0.8A; VCE= 3V 1000 15000 hFE-2 DC Current Gain Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 1.5A; V.