2SD1390 - Inchange Semiconductor

2SD1390 Power Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter.

Features

Voltage IC= 2A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 5.0 V 1.5 V 50 μA 1 mA hFE DC Current Gain IC= 2A; VCE= 5V 2 7 tf Fall Time tstg Storage Time IC= 2.5A, IBend= 1.1A, LB= 10μH 1 μs 11 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The p.