2SD1396 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD1396

INCHANGE
2SD1396
2SD1396 2SD1396
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Part Number 2SD1396
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for...
Features R)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V VECF C-E Diode Forward Voltage tf Fall Time IF= 2.5A IC= 2A, IB1= 0.6A, IB2= 1.2A; RL= 100Ω; VCC= 200V 2SD1396 MIN TYP. MAX UNIT 1500 V 800 V 7 V 8.0 V 1.5 V 10 μA 40 130 mA 8 3 MHz 2.0 V 0.7 μs NOTICE...

Document Datasheet 2SD1396 Data Sheet
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