Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings.
q q
10.5min.
Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 8 6 4 1 30 1.3 150
–55 to +150 Unit V
10.0±0.3
1.5max.
1.1max.
2.0
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1251 2SD1251A 2SD1251 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
emitter voltage 2SD1251A Emitter to base voltage Peak c.
SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1250 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor | |
2 | 2SD1250 |
Kexin |
Silicon NPN Transistor | |
3 | 2SD1250A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Power Transistor | |
4 | 2SD1251A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
5 | 2SD1251A |
Kexin |
Silicon NPN Transistor | |
6 | 2SD1252 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
7 | 2SD1252 |
Kexin |
Silicon NPN Transistor | |
8 | 2SD1252A |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor | |
9 | 2SD1252A |
Kexin |
Silicon NPN Transistor | |
10 | 2SD1253 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
11 | 2SD1253 |
Kexin |
Silicon NPN Transistor | |
12 | 2SD1253A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar Power Transistor |