Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB929 and 2SB929A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling .
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 6 5 3 35 1.3 150
–55 to +150 Unit V
1.5±0.1
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1252 2SD1252A 2SD1252 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Uni.
SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1250 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor | |
2 | 2SD1250 |
Kexin |
Silicon NPN Transistor | |
3 | 2SD1250A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Power Transistor | |
4 | 2SD1251 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
5 | 2SD1251 |
Kexin |
Silicon NPN Transistor | |
6 | 2SD1251A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
7 | 2SD1251A |
Kexin |
Silicon NPN Transistor | |
8 | 2SD1252A |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor | |
9 | 2SD1252A |
Kexin |
Silicon NPN Transistor | |
10 | 2SD1253 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
11 | 2SD1253 |
Kexin |
Silicon NPN Transistor | |
12 | 2SD1253A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar Power Transistor |