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Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A 8.5±0.2 6.0±0.2 Unit: mm 3.4±0.3 1.0±0.1 3.0–+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 1.5–+00.4 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity .
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SD1250
(Base open)
2SD1250A
VCBO VCEO
200 150 180
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage tempe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1250 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor |
|
| 2 | 2SD1250 |
Kexin |
Silicon NPN Transistor |
|
| 3 | 2SD1251 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor |
|
| 4 | 2SD1251 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SD1251A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor |
|
| 6 | 2SD1251A |
Kexin |
Silicon NPN Transistor |
|
| 7 | 2SD1252 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor |
|
| 8 | 2SD1252 |
Kexin |
Silicon NPN Transistor |
|
| 9 | 2SD1252A |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor |
|
| 10 | 2SD1252A |
Kexin |
Silicon NPN Transistor |
|
| 11 | 2SD1253 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 12 | 2SD1253 |
Kexin |
Silicon NPN Transistor |
|