SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 .
Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1251 2SD1251A Collector-emitter voltage 2SD1251 2SD1251A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP IB PC VCEO Symbol VCBO Rating 60 80 60 80 8 4 6 1 1.3.
Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1251 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
2 | 2SD1251 |
Kexin |
Silicon NPN Transistor | |
3 | 2SD1250 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor | |
4 | 2SD1250 |
Kexin |
Silicon NPN Transistor | |
5 | 2SD1250A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Power Transistor | |
6 | 2SD1252 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
7 | 2SD1252 |
Kexin |
Silicon NPN Transistor | |
8 | 2SD1252A |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor | |
9 | 2SD1252A |
Kexin |
Silicon NPN Transistor | |
10 | 2SD1253 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
11 | 2SD1253 |
Kexin |
Silicon NPN Transistor | |
12 | 2SD1253A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar Power Transistor |