SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1250 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.15 0.50 -0.15 Low collector-emitter saturation voltage VCE(sat) +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.
+0.2 9.70 -0.2 +0.15 0.50 -0.15 Low collector-emitter saturation voltage VCE(sat) +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 200 150 6 2 3 1.3 30 150 -55 to +150 W W Unit V V V A Electrical Characteristics Ta = 25 Para.
Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical de.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1250A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Power Transistor | |
2 | 2SD1251 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
3 | 2SD1251 |
Kexin |
Silicon NPN Transistor | |
4 | 2SD1251A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
5 | 2SD1251A |
Kexin |
Silicon NPN Transistor | |
6 | 2SD1252 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor | |
7 | 2SD1252 |
Kexin |
Silicon NPN Transistor | |
8 | 2SD1252A |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor | |
9 | 2SD1252A |
Kexin |
Silicon NPN Transistor | |
10 | 2SD1253 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
11 | 2SD1253 |
Kexin |
Silicon NPN Transistor | |
12 | 2SD1253A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar Power Transistor |