2SD1251 |
Part Number | 2SD1251 |
Manufacturer | Panasonic Semiconductor |
Description | Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. Wide area of safe o... |
Features |
q q
10.5min.
Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 8 6 4 1 30 1.3 150 –55 to +150 Unit V 10.0±0.3 1.5max. 1.1max. 2.0 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1251 2SD1251A 2SD1251 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 emitter voltage 2SD1251A Emitter to base voltage Peak c... |
Document |
2SD1251 Data Sheet
PDF 50.84KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1250 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistor | |
2 | 2SD1250 |
Kexin |
Silicon NPN Transistor | |
3 | 2SD1250A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Power Transistor | |
4 | 2SD1251 |
Kexin |
Silicon NPN Transistor | |
5 | 2SD1251A |
Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor |