www.DataSheet4U.com Ordering number : ENN7614 2SC5967 NPN Triple Diffused Planar Silicon Transistor 2SC5967 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2048B [2SC5967] 6.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MB.
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Package Dimensions
unit : mm 2048B
[2SC5967]
6.0
High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process.
20.0
3.3
5.0
26.0
2.0 3.4
20.7
2.0
1.0
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
2.8
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
5.45.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5960 |
Sanyo Electric |
NPN Triple Diffused Planar Silicon Transistor | |
2 | 2SC5964 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors | |
3 | 2SC5964 |
ON Semiconductor |
Bipolar Transistor | |
4 | 2SC5966 |
Sanyo Semicon Device |
NPN SILICON TRANSISTOR | |
5 | 2SC5968 |
Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
7 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor | |
8 | 2SC5902 |
INCHANGE |
NPN Transistor | |
9 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor | |
10 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor | |
11 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |