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www.DataSheet4U.com Ordering number : ENN7653 2SC5966 NPN Triple Diffused Planar Silicon Transistor 2SC5966 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5966] 16.0 5.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption .
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Package Dimensions
unit : mm 2174A
[2SC5966]
16.0
5.0
High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process.
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5960 |
Sanyo Electric |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC5964 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC5964 |
ON Semiconductor |
Bipolar Transistor |
|
| 4 | 2SC5967 |
Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC5968 |
Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 7 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC5902 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor |
|
| 10 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor |
|
| 11 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |
|