2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2113 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 .
1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2113 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 0.16 (1) Base (2) Emitter (3) Collector 0.1 0.3 0.6 Each lead has same dimensions Abbreviated symbol : UY !Applications Low frequency amplifier High speed switching !Structure NPN Silicon epitaxial planar transistor !Packaging specifications Package Type Code Basic .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5912 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor | |
2 | 2SC5913 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5914 |
Panasonic |
Silicon NPN Transistor | |
4 | 2SC5915 |
Sanyo Semicon Device |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |
5 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor | |
7 | 2SC5902 |
INCHANGE |
NPN Transistor | |
8 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor | |
9 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor | |
10 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
11 | 2SC5906 |
Toshiba |
Silicon NPN Transistor | |
12 | 2SC5907 |
Renesas |
Silicon NPN Epitaxial Type Transistor |