www.DataSheet4U.com Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 .
• High breakdown voltage: VCBO ≥ 1 500 V
• Wide safe operation area
• Built-in dumper diode
26.5±0.5
(23.4)
(2.0)
5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5
5.5±0.3
5˚ 5˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current
* Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 500 1 500 7 3 10 15 40 3 150 −55 to +150 °C °C Unit V V V A A A W
3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5913 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5914 |
Panasonic |
Silicon NPN Transistor | |
3 | 2SC5915 |
Sanyo Semicon Device |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |
4 | 2SC5916 |
Rohm |
NPN TRANSISTOR | |
5 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor | |
7 | 2SC5902 |
INCHANGE |
NPN Transistor | |
8 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor | |
9 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor | |
10 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
11 | 2SC5906 |
Toshiba |
Silicon NPN Transistor | |
12 | 2SC5907 |
Renesas |
Silicon NPN Epitaxial Type Transistor |