2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Low Saturation Voltage High Speed : VCBO = 1500 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Col.
uency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 6 A VCE = 5 V, IC = 8 A IC = 8 A, IB = 2 A IC = 8 A, IB = 2 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 6 , IB1 (end) = 0.8 A fH = 32 kHz ICP = 5.5 A, IB1 (end) = 0.8 A fH = 80 kHz Min ― ― 700 28 6.2 4.3 ― ― ― ― ― ― ― ― Typ. ― ― ― ― ― ― ― 1.0 2 120 2.8 0.2 2.3 0.1 Max 1 100 ― 60 10 6.7 3 1.4 ― ― ― ― ― ― V V MHz pF µs ― UN.
·High speed switching ·High voltage ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5850 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5851 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
3 | 2SC5852 |
Renesas Technology |
Silicon NPN epitaxial planar type Transistor | |
4 | 2SC5856 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
5 | 2SC5857 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
6 | 2SC5858 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
7 | 2SC5859 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
8 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR | |
9 | 2SC5801 |
NEC |
NPN TRANSISTOR | |
10 | 2SC5802 |
SavantIC |
Silicon NPN Power Transistors | |
11 | 2SC5802 |
INCHANGE |
NPN Transistor | |
12 | 2SC5803 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor |