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www.DataSheet4U.com 2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1500 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm ABSOLUTE MAXIMUM RA.
perating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-22 2SC5856 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector − Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector−Emitter Saturatio.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5850 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor |
|
| 2 | 2SC5851 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor |
|
| 3 | 2SC5852 |
Renesas Technology |
Silicon NPN epitaxial planar type Transistor |
|
| 4 | 2SC5855 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC5855 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC5857 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 7 | 2SC5858 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 8 | 2SC5859 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 9 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR |
|
| 10 | 2SC5801 |
NEC |
NPN TRANSISTOR |
|
| 11 | 2SC5802 |
SavantIC |
Silicon NPN Power Transistors |
|
| 12 | 2SC5802 |
INCHANGE |
NPN Transistor |
|