www.DataSheet4U.com 2SC5857 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5857 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−E.
itching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 9 A , IB1 (end) = 1.4 A fH = 32 kHz ICP = 8 A, IB1 (end) = 1.2 A fH = 45 kHz Weight: 5.5 g (typ.) Min ― ― 750 30 11 5 ― ― ― ― ― ― ― ― Typ. ― ― ― ― ― ― ― 1.0 2 280 4.5 0.1 3.5 0.1 Max 1 100 ― 60 19 7.5 1.5 1.5 ― ― ― ― ― ― UNIT mA µA V ― V V MHz pF µs µs.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5850 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5851 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
3 | 2SC5852 |
Renesas Technology |
Silicon NPN epitaxial planar type Transistor | |
4 | 2SC5855 |
Toshiba |
Silicon NPN Transistor | |
5 | 2SC5855 |
INCHANGE |
NPN Transistor | |
6 | 2SC5856 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
7 | 2SC5858 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
8 | 2SC5859 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
9 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR | |
10 | 2SC5801 |
NEC |
NPN TRANSISTOR | |
11 | 2SC5802 |
SavantIC |
Silicon NPN Power Transistors | |
12 | 2SC5802 |
INCHANGE |
NPN Transistor |