www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and.
• High frequency amplifier
Outline
CMPAK
3 1 2 1. Emitter 2. Base 3. Collector
2SC5851
www.DataSheet4U.com
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC
* Tj Tstg Ratings 30 30 5 100 150 150 −55 to +125 Unit V V V mA mW °C °C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5
1
Typ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5850 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5852 |
Renesas Technology |
Silicon NPN epitaxial planar type Transistor | |
3 | 2SC5855 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC5855 |
INCHANGE |
NPN Transistor | |
5 | 2SC5856 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
6 | 2SC5857 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
7 | 2SC5858 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
8 | 2SC5859 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
9 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR | |
10 | 2SC5801 |
NEC |
NPN TRANSISTOR | |
11 | 2SC5802 |
SavantIC |
Silicon NPN Power Transistors | |
12 | 2SC5802 |
INCHANGE |
NPN Transistor |