2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−.
Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 18 A IC = 18 A, IB = 4.5 A IC = 18 A, IB = 4.5 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A , IB1 (end) = 1 A fH = 32 kHz ICP = 7.5 A, IB1 (end) = 1 A fH = 100 kHz Weight: 9.75 g (typ.) Min ― ― 750 20 10 4.5 ― ― ― ― ― ― ― ― Typ. ― ― ― ― ― ― ― 1.0 2 320 4 0.15 1.8 0.1 Max 1 100 ― 55 22 8 3 1.5 ― ― ― ― ― ― UNIT mA µA V ― V V MHz pF µs µs 1 2004-5-18 2SC5859 IC .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5850 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5851 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
3 | 2SC5852 |
Renesas Technology |
Silicon NPN epitaxial planar type Transistor | |
4 | 2SC5855 |
Toshiba |
Silicon NPN Transistor | |
5 | 2SC5855 |
INCHANGE |
NPN Transistor | |
6 | 2SC5856 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
7 | 2SC5857 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
8 | 2SC5858 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
9 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR | |
10 | 2SC5801 |
NEC |
NPN TRANSISTOR | |
11 | 2SC5802 |
SavantIC |
Silicon NPN Power Transistors | |
12 | 2SC5802 |
INCHANGE |
NPN Transistor |