2SC5855 |
Part Number | 2SC5855 |
Manufacturer | INCHANGE |
Description | ·High speed switching ·High voltage ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflect... |
Features |
ge IC=10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC=8A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC=6A; VCE= 5V
hFE-3
DC Current Gain
IC=8A; VCE= 5V
MIN TYP. MAX UNIT
700
V
5
V
3
V
1.4
V
100 μA
28
60
6.2
10
4.3
6.7
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is... |
Document |
2SC5855 Data Sheet
PDF 184.76KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC5850 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5851 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor | |
3 | 2SC5852 |
Renesas Technology |
Silicon NPN epitaxial planar type Transistor | |
4 | 2SC5855 |
Toshiba |
Silicon NPN Transistor | |
5 | 2SC5856 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |