2SC5393 - Panasonic Semiconductor

2SC5393 NPN Transistor

Power Transistors 2SC5393 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 I Features • High-speed switching • High collector to base voltage VCBO • Wide area of safe operation (ASO) • Satisfactory linearity of forward current transfer r.

Features

• High-speed switching
• High collector to base voltage VCBO
• Wide area of safe operation (ASO)
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one / screw 14.0±0.5 Solder Dip (4.0) e pe) I Absolute Maximum Ratings TC = 25°C c e. d ty Parameter Symbol Rating Unit n d stag tinue Collector to base voltage VCBO 600 V le on Collector to emitter voltage VCES 600 V a elifecyc disc VCEO 400 V n u t ed, Emitter to base voltage VEBO 7 V duc typ Peak collector current ICP 10 A te tin Pro ued Collec.