Ordering number:EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5300] 16.0 3.4.
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5300]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Paramet.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5301 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
2 | 2SC5302 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
3 | 2SC5302 |
INCHANGE |
NPN Transistor | |
4 | 2SC5303 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
5 | 2SC5304LS |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC5305 |
INCHANGE |
NPN Transistor | |
7 | 2SC5305 |
UTC |
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR | |
8 | 2SC5305LS |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC5307 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5310 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
11 | 2SC5310 |
Kexin |
NPN Epitaxial Planar Silicon Transistors | |
12 | 2SC5315 |
Toshiba Semiconductor |
NPN TRANSISTOR |