2SC5390 - Hitachi Semiconductor

2SC5390 NPN TRANSISTOR

2SC5390 Silicon NPN Epitaxial High Frequency Amplifier ADE-208-492 (Z) 1st. Edition December. 1996 Features • Excellent high frequency characteristics fT = 1.4GHz (typ.) • Low output capacitance C ob = 2.4 pF (typ.) • Isolated package TO–126FM Outline TO–126FM 12 3 1. Emitter 2. Collector 3. Base 2SC5390 Absolute Maximum Ratings (Ta = 25°C) Item Collect.

Features

• Excellent high frequency characteristics fT = 1.4GHz (typ.)
• Low output capacitance C ob = 2.4 pF (typ.)
• Isolated package TO
  –126FM Outline TO
  –126FM 12 3 1. Emitter 2. Collector 3. Base 2SC5390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC PC
* Tj Tstg 1 Ratings 110 110 3 200 400 1.4 7 150
  –55 to +150 Unit V V .