2SC5392 - Panasonic

2SC5392 Silicon NPN Transistor

Power Transistors 2SC5392 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features 9.9±0.3 4.6±0.2 2.9±0.2 3.0±0.5 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.2±0.1 q Satisfactory linearity of foward current transfer ratio hFE q Dielectric b.

Features

9.9±0.3 4.6±0.2 2.9±0.2 3.0±0.5 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.2±0.1 q Satisfactory linearity of foward current transfer ratio hFE q Dielectric breakdown voltage of the package: > 5kV 15.0±0.5 / 1.4±0.2 2.6±0.1 1.6±0.2 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 13.7±0.2 4.2±0.2 n d tage. ued Collector to base voltage VCBO 800 V a e cle s contin Collector to emitter voltage VCES 800 V cy is VCEO 500 V n u t life ed, d Emitter to base voltage VEBO 8 V duc typ .