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Ordering number:EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5302] 3.4 16.0 .
· Fast speed (t f=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5302]
3.4 16.0
5.0 8.0
5.6 3.1
21.0
22.0
4.0
2.8 2.0
20.4
2.0
1.0
0.6
1
2
3
3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO CEO EBO C CP C
Tc=25˚C
5.45
5.45
1 : Base 2 :.
2SC5302 - INCHANGE
·High Breakdown Voltage :VCBO= 1500V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for ro.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5300 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5301 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5303 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 4 | 2SC5304LS |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 5 | 2SC5305 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC5305 |
UTC |
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR |
|
| 7 | 2SC5305LS |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5307 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5310 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5310 |
Kexin |
NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SC5315 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 12 | 2SC5316 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|