Ordering number:EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5301] 20.0 5.0.
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2111A
[2SC5301]
20.0 5.0
20.7 26.0 2.8 3.0
2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
1.75 2.9 1.2
12 3 5.45 5.45
0.6
5.45 5.45
1.0
3.1 1 : Base 2 : Collector.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5300 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
2 | 2SC5302 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
3 | 2SC5302 |
INCHANGE |
NPN Transistor | |
4 | 2SC5303 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
5 | 2SC5304LS |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC5305 |
INCHANGE |
NPN Transistor | |
7 | 2SC5305 |
UTC |
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR | |
8 | 2SC5305LS |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC5307 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5310 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
11 | 2SC5310 |
Kexin |
NPN Epitaxial Planar Silicon Transistors | |
12 | 2SC5315 |
Toshiba Semiconductor |
NPN TRANSISTOR |