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·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1.
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC current gain IC= 1A ; VCE= 5V hFE-2 DC current gain IC= 8A ; VCE= 5V 2SC5299 MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 1.0 mA 1.0 mA 20 30 4 7 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is p.
2SC5299 - Sanyo Semicon Device
Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizonta.
2SC5299 - SavantIC
·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT disp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5291 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5294 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 3 | 2SC5294A |
Panasonic |
Silicon NPN Transistor |
|
| 4 | 2SC5295 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5295G |
Panasonic |
Silicon NPN Transistor |
|
| 6 | 2SC5295J |
Panasonic |
Silicon NPN Transistor |
|
| 7 | 2SC5296 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5296 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 9 | 2SC5297 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5297 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC5297 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SC5298 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|