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2SC5299 |
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| Part Number | 2SC5299 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-def... |
| Features |
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC current gain
IC= 1A ; VCE= 5V
hFE-2
DC current gain
IC= 8A ; VCE= 5V
2SC5299
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10
μA
1.0 mA
1.0 mA
20
30
4
7
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is p... |
| Document |
 2SC5299 Data Sheet
PDF 211.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5291 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5294 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 3 | 2SC5294A |
Panasonic |
Silicon NPN Transistor |
|
| 4 | 2SC5295 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5295G |
Panasonic |
Silicon NPN Transistor |
|