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w w w . D a t a S h e e t . c o . k r Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT proces.
· High speed : tf=100ns typ.
· High breakdown voltage : VCBO=1500V.
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5297]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
1
2
3 3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
5.45
5.45
1 : Base 2 : Collector 3 : E.
2SC5297 - SavantIC
·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT disp.
2SC5297 - INCHANGE
·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5291 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5294 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 3 | 2SC5294A |
Panasonic |
Silicon NPN Transistor |
|
| 4 | 2SC5295 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5295G |
Panasonic |
Silicon NPN Transistor |
|
| 6 | 2SC5295J |
Panasonic |
Silicon NPN Transistor |
|
| 7 | 2SC5296 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5296 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 9 | 2SC5298 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5299 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC5299 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 12 | 2SC5299 |
SavantIC |
SILICON POWER TRANSISTOR |
|