Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features • • • • Package Dimensions unit : mm 2084B [2SC5291] 10.5 1.9 4.5 1.2 Adoption of FBET, MBIT processes. Large current capacity. Can be provided in taping. 9.5mm onboard mounting height. 2.6 1.4 7.5 1.2 1.6 0.5 1 2 3 1.0 8.5.
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Package Dimensions
unit : mm 2084B
[2SC5291]
10.5 1.9 4.5
1.2
Adoption of FBET, MBIT processes. Large current capacity. Can be provided in taping. 9.5mm onboard mounting height.
2.6 1.4
7.5
1.2 1.6 0.5 1 2 3
1.0
8.5
0.5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions
1 : Emitter 2 : Collector 3 : Base
2.5 2.5
SANY.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5294 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor | |
2 | 2SC5294A |
Panasonic |
Silicon NPN Transistor | |
3 | 2SC5295 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5295G |
Panasonic |
Silicon NPN Transistor | |
5 | 2SC5295J |
Panasonic |
Silicon NPN Transistor | |
6 | 2SC5296 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
7 | 2SC5296 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
8 | 2SC5297 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC5297 |
INCHANGE |
NPN Transistor | |
10 | 2SC5297 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5298 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
12 | 2SC5299 |
INCHANGE |
NPN Transistor |