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Ordering number : EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit: mm.
• High Speed : tf=100ns typ.
• High Breakdown voltage : VCBO=1500V.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.
Package Dimensions
unit: mm 2039C-TO3PML
[2SC5298]
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Base 2 : Collector 3 : Emitter SANYO: TO3PML
Tc=25°C
Ratings 1500 800 6 10 2.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5291 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5294 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 3 | 2SC5294A |
Panasonic |
Silicon NPN Transistor |
|
| 4 | 2SC5295 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5295G |
Panasonic |
Silicon NPN Transistor |
|
| 6 | 2SC5295J |
Panasonic |
Silicon NPN Transistor |
|
| 7 | 2SC5296 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5296 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 9 | 2SC5297 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5297 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC5297 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SC5299 |
INCHANGE |
NPN Transistor |
|