2SC5295J - Panasonic

2SC5295J Silicon NPN Transistor

Transistors 2SC5295J Silicon NPN epitaxial planar type 0.80±0.05 For 2 GHz band low-noise amplification 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ • High transition frequency fT • Low collector output capacitance (Common base, input open cir- 12 (0.80) cuited) Cob • SS-Mini type package, all.

Features

3 (0.375) 0.85
  –+00..0035 1.60±0.05 5˚
• High transition frequency fT
• Low collector output capacitance (Common base, input open cir- 12 (0.80) cuited) Cob
• SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) 5˚ /
■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0 to 0.02 0.70
  –+00..0035 V 0.10 max. c e. d ty Collector-emitter voltage (Base open) VCEO 10 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2 V a e cl.