TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications 2SC5196 Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Colle.
ability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 80 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 m.
·With TO-3P(I) package ·Complement to type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fi.
·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 ·100.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5190 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5191 |
NEC |
NPN TRANSISTOR | |
3 | 2SC5191 |
Inchange Semiconductor |
Silicon NPN Transistor | |
4 | 2SC5192 |
NEC |
NPN TRANSISTOR | |
5 | 2SC5193 |
NEC |
NPN TRANSISTOR | |
6 | 2SC5194 |
NEC |
NPN TRANSISTOR | |
7 | 2SC5194-T1 |
NEC |
NPN TRANSISTOR | |
8 | 2SC5194-T2 |
NEC |
NPN TRANSISTOR | |
9 | 2SC5195 |
NEC |
NPN TRANSISTOR | |
10 | 2SC5197 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
11 | 2SC5197 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC5197 |
INCHANGE |
NPN Transistor |