DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA PACKAGE DRAWINGS.
• Low Voltage Operation, Low Phase Distortion
• Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current IC = 100 mA
PACKAGE DRAWINGS
(Unit: mm)
+0.2
0.4
–0.05
1.5
+0.2
–0.1
2
0.85 0.95
2.9±0.2 (1.8)
EIAJ: SC-61
1
+0.1
–0.05
0.6
PART NUMBER 2SC5192-T1
QUANTITY 3 Kpcs/Reel
PACKING STYLE
5˚
5˚
1.1
–0.1
2SC5192-T2
3 Kpcs/Reel
Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape.
5˚
0 to 0.1
5˚
Remark If you require an evaluation sample.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5190 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5191 |
NEC |
NPN TRANSISTOR | |
3 | 2SC5191 |
Inchange Semiconductor |
Silicon NPN Transistor | |
4 | 2SC5193 |
NEC |
NPN TRANSISTOR | |
5 | 2SC5194 |
NEC |
NPN TRANSISTOR | |
6 | 2SC5194-T1 |
NEC |
NPN TRANSISTOR | |
7 | 2SC5194-T2 |
NEC |
NPN TRANSISTOR | |
8 | 2SC5195 |
NEC |
NPN TRANSISTOR | |
9 | 2SC5196 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5196 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5196 |
INCHANGE |
NPN Transistor | |
12 | 2SC5197 |
Toshiba Semiconductor |
NPN TRANSISTOR |