2SC5194 - NEC

2SC5194 NPN TRANSISTOR

DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz • Large Absolute Maximum Collector Current • 4-Pin Compact Mini Mold Package PACKAGE DRAWINGS (Unit: mm) 2.1±0.2 0.3 –0.05 +0.1 NF = 1..

Features

• Low Voltage Operation, Low Phase Distortion
• Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
• 4-Pin Compact Mini Mold Package PACKAGE DRAWINGS (Unit: mm) 2.1±0.2 0.3
  –0.05 +0.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz IC = 100 mA 2.0±0.2 1.25±0.1 (1.25) 0.60 0.65 +0.1 ORDERING INFORMATION PART NUMBER 2SC5194-T1 QUANTITY 3 Kpcs/Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation sid.