DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz • Large Absolute Maximum Collector Current • 4-Pin Compact Mini Mold Package PACKAGE DRAWINGS (Unit: mm) 2.1±0.2 0.3 –0.05 +0.1 NF = 1..
• Low Voltage Operation, Low Phase Distortion
• Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
• 4-Pin Compact Mini Mold Package
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.2
0.3
–0.05
+0.1
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz IC = 100 mA
2.0±0.2
1.25±0.1
(1.25) 0.60 0.65
+0.1
ORDERING INFORMATION
PART NUMBER 2SC5194-T1 QUANTITY 3 Kpcs/Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation sid.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5194-T2 |
NEC |
NPN TRANSISTOR | |
2 | 2SC5194 |
NEC |
NPN TRANSISTOR | |
3 | 2SC5190 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5191 |
NEC |
NPN TRANSISTOR | |
5 | 2SC5191 |
Inchange Semiconductor |
Silicon NPN Transistor | |
6 | 2SC5192 |
NEC |
NPN TRANSISTOR | |
7 | 2SC5193 |
NEC |
NPN TRANSISTOR | |
8 | 2SC5195 |
NEC |
NPN TRANSISTOR | |
9 | 2SC5196 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5196 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5196 |
INCHANGE |
NPN Transistor | |
12 | 2SC5197 |
Toshiba Semiconductor |
NPN TRANSISTOR |