2SC5191 - Inchange Semiconductor

2SC5191 Silicon NPN Transistor

·Low Voltage Operation ,Low Phase Distortion ·Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz ·Large Absolute Maximum Collector Current IC = 100 mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-nois.

Features

ess otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 5V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 0.1 μA hFE DC Current Gain IC= 3mA ; VCE= 1V 80 160 fT(1) Current-Gain—Bandwidth Product IC= 3mA ; VCE= 1V;f= 2.0GHz 4 4.5 GHz fT(2) Current-Gain—Bandwidth Product IC= 20mA ; VCE= 3V;f= 2.0GHz 8.5 GHz Cre Feed-Back Capacitance IE= 0 ; VCB= 1V;f= 1.0MHz 0.75 0.85 pF ︱S21e︱2(1) Insertion Power Gain IC= 3mA ; VCE= 1V;f= 2.0GHz 2.5 3.5 dB ︱S21e︱2(2) Insertion Power Gain IC= 20mA ; VCE= 3V;f= 2.0GHz .