Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm s Features q q q 2.1±0.1 0.425 1.25±0.1 0.425 High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. .
q q q
2.1±0.1 0.425 1.25±0.1 0.425
High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings 9 6 2 30 150 150
–55 ~ +150
Unit V V V mA mW ˚C ˚C
0.7±0.1
0 to 0.1
0.2±0.1
1:Base 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5191 |
NEC |
NPN TRANSISTOR | |
2 | 2SC5191 |
Inchange Semiconductor |
Silicon NPN Transistor | |
3 | 2SC5192 |
NEC |
NPN TRANSISTOR | |
4 | 2SC5193 |
NEC |
NPN TRANSISTOR | |
5 | 2SC5194 |
NEC |
NPN TRANSISTOR | |
6 | 2SC5194-T1 |
NEC |
NPN TRANSISTOR | |
7 | 2SC5194-T2 |
NEC |
NPN TRANSISTOR | |
8 | 2SC5195 |
NEC |
NPN TRANSISTOR | |
9 | 2SC5196 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5196 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5196 |
INCHANGE |
NPN Transistor | |
12 | 2SC5197 |
Toshiba Semiconductor |
NPN TRANSISTOR |