www.DataSheet4U.com 2SC5068A Silicon NPN Triple Diffused Planar July 1993 Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V, IC = 12 A • High speed switching tf = 0.2 µsec(typ) TO–3PFM (N) 1 2 3 1. Base 2. Collector 3. Emitter www.DataSheet4U.com 2SC5068A Absolute Maximum Ratings .
• High breakdown voltage
VCBO = 1500 V, IC = 12 A
• High speed switching tf = 0.2 µsec(typ)
TO
–3PFM (N)
1
2 3
1. Base 2. Collector 3. Emitter
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2SC5068A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(surge) PC
*1 Tj Tstg Ratings 1500 800 6 12 20 50 150
–55 to +150 Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Col.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC506 |
Toshiba |
SILICON NPN TRANSISTOR | |
2 | 2SC5060 |
Rohm |
Power transistor | |
3 | 2SC5061 |
Rohm |
TRANSISTORS | |
4 | 2SC5063 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5063 |
Kexin |
Silicon NPN triple diffusion planar type Transistor | |
6 | 2SC5064 |
Toshiba Semiconductor |
NPN Transistor | |
7 | 2SC5064 |
Inchange Semiconductor |
Silicon NPN Transistor | |
8 | 2SC5065 |
Toshiba Semiconductor |
NPN Transistor | |
9 | 2SC5065 |
INCHANGE |
NPN Transistor | |
10 | 2SC5066 |
Toshiba Semiconductor |
NPN Transistor | |
11 | 2SC5066FT |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5069 |
Sanyo Semicon Device |
NPN TRANSISTOR |