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2SC5060 Transistors Power transistor (90±10V, 3A) 2SC5060 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !Ext.
1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0.45 !Equivalent circuit C Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base B R1 B : Base C : Collector E : Emitter R1 R2 R2 E 3kΩ 1kΩ !Absolute maximum ratings (Ta=25°C) Parameter.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC506 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5061 |
Rohm |
TRANSISTORS |
|
| 3 | 2SC5063 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5063 |
Kexin |
Silicon NPN triple diffusion planar type Transistor |
|
| 5 | 2SC5064 |
Toshiba Semiconductor |
NPN Transistor |
|
| 6 | 2SC5064 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC5065 |
Toshiba Semiconductor |
NPN Transistor |
|
| 8 | 2SC5065 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC5066 |
Toshiba Semiconductor |
NPN Transistor |
|
| 10 | 2SC5066FT |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC5068A |
Hitachi |
Silicon NPN Triple Diffused Planar Transistor |
|
| 12 | 2SC5069 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|