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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base cur.
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 500 MHz VCE = 5 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 3 mA, f = 500 MHz VCE = 5 V, IC = 3 mA, f = 1 GHz Min Typ. Max Unit 5 7 ⎯ GHz ⎯ 17 ⎯ dB .
2SC5065 - INCHANGE
·Low Noise and High Gain NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, f = 1.0 GHz ·100% avalanche tested ·Minimum L.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC506 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5060 |
Rohm |
Power transistor |
|
| 3 | 2SC5061 |
Rohm |
TRANSISTORS |
|
| 4 | 2SC5063 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5063 |
Kexin |
Silicon NPN triple diffusion planar type Transistor |
|
| 6 | 2SC5064 |
Toshiba Semiconductor |
NPN Transistor |
|
| 7 | 2SC5064 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC5066 |
Toshiba Semiconductor |
NPN Transistor |
|
| 9 | 2SC5066FT |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5068A |
Hitachi |
Silicon NPN Triple Diffused Planar Transistor |
|
| 11 | 2SC5069 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 12 | 2SC5069 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|