2SC5066FT - Toshiba Semiconductor

2SC5066FT NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base curr.

Features

g Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 500 MHz VCE = 5 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 3 mA, f = 500 MHz VCE = 5 V, IC = 3 mA, f = 1 GHz Min Typ. Max Unit 5 7 ⎯ GHz ⎯ 17 ⎯ dB 8.5 12 ⎯ ⎯1⎯ dB ⎯ 1.1 .