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Power Transistors 2SC5063 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q q 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiati.
q q q q
1.5max.
1.1max.
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150
–55 to +150 Unit V
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction .
2SC5063 - Kexin
SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SC5063 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 F.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC506 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5060 |
Rohm |
Power transistor |
|
| 3 | 2SC5061 |
Rohm |
TRANSISTORS |
|
| 4 | 2SC5064 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SC5064 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC5065 |
Toshiba Semiconductor |
NPN Transistor |
|
| 7 | 2SC5065 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC5066 |
Toshiba Semiconductor |
NPN Transistor |
|
| 9 | 2SC5066FT |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5068A |
Hitachi |
Silicon NPN Triple Diffused Planar Transistor |
|
| 11 | 2SC5069 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 12 | 2SC5069 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|