2SC506 - Toshiba

2SC506 SILICON NPN TRANSISTOR

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Co.

Features

• High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Collector- Emitter Voltage 2SC505 2SC506 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range V CEO v EBO ic IB pC T i Tstg 300 V 200 3V 1. EMITTER 2. BASE 200 mA 3. COLLECTOR (CASE) 50 mA JEDEC 600 mW TO-39 175 °C TC-5, TB-5B -65M.75 °C TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=2.