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2SC3679 |
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| Part Number | 2SC3679 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 2A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 12V
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A , IB1= 0.3A; IB2= -1A RL= 125Ω; VCC= 250V
MIN TYP. MAX UNIT
800
V
0.5
V
1.2
V
0.1 mA
0.1 mA
10
30
6
MHz
75
pF
1.0... |
| Document |
 2SC3679 Data Sheet
PDF 199.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3670 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3671 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3672 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3673 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3675 |
Sanyo Semicon Device |
NPN Transistor |
|