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2SC3677 |
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| Part Number | 2SC3677 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·High breakdown voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
mitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=2A; IB=0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC=2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB=5V; IC= 0
hFE
DC Current Gain
IC=0.5A ; VCE= 5V
MIN TYP. MAX UNIT
60
V
1.5
V
2.0
V
10
μA
10
μA
800
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are int... |
| Document |
 2SC3677 Data Sheet
PDF 181.68KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | 2SC3670 |
Toshiba Semiconductor |
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| 2 | 2SC3671 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3672 |
Toshiba Semiconductor |
Silicon NPN Transistor |
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| 4 | 2SC3673 |
Toshiba Semiconductor |
Silicon NPN Transistor |
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| 5 | 2SC3675 |
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|