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·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.
IONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ -140 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.0 V VBE(on) Base -Emitter On Voltage IC= -5A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -160V ; IE=0 -100 μA IEBO Emitter Cutoff Current VEB= -4V; IC=0 -100 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 100 200 hFE-2 DC Current Gain IC= -5A ; VCE= -5V 35 COB Output C.
2SB817C - Sanyo Electric
www.DataSheet4U.com Ordering number : ENA0188 2SB817C / 2SD1047C 2SB817C / 2SD1047C Features • • • PNP Epitaxial Plan.
2SB817C - ON Semiconductor
Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Feature.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB817 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB817 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SB817E |
TAITRON |
Power Transistor |
|
| 4 | 2SB817E |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB810 |
NEC |
PNP SILICON TRANSISTOR |
|
| 6 | 2SB812 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB812 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB813 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB815 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SB815 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SB815 |
Kexin |
Transistor |
|
| 12 | 2SB816 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|