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·With TO-3PN package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·For audio frequency output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base vo.
er saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A ;IB=-0.3A IC=-1A;VCE=-5V VCB=-60V IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V 40 MIN -60 -60 -6 2SB812 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE TYP. MAX UNIT V V V -1.5 -1.5 -0.1 -0.1 250 V V mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB812 Fig.2 outline dimensions 3 .
2SB812 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 ·Minimum.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB810 |
NEC |
PNP SILICON TRANSISTOR |
|
| 2 | 2SB813 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB815 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SB815 |
ON Semiconductor |
Bipolar Transistor |
|
| 5 | 2SB815 |
Kexin |
Transistor |
|
| 6 | 2SB816 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SB816 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB816 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB817 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 10 | 2SB817 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 11 | 2SB817C |
ON Semiconductor |
Bipolar Transistor |
|
| 12 | 2SB817C |
Sanyo Electric |
PNP Epitaxial Planar Silicon Transistor |
|