2SB816 - INCHANGE

2SB816 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1046 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF power amplifier, 50W output large power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO.

Features

kdown Voltage IC= -30mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(on) Base -Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE=0 IEBO Emitter Cutoff Current VEB= -4V; IC=0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -5A; VCE= -5V  hFE-1 Classifications D E 60-120 100-200 MIN TYP. MAX UNIT -120 V -150 V -6 V -2.0 V -1.5 V -100 μA -100 μA 60 200 20 NOTICE： I.