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2SB817C |
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| Part Number | 2SB817C |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance • Wide SOA and high durability against breakdown •... |
| Features |
• Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25°C Conditions Ratings -160 -140 --6 --12 --20 2.5 120 150 --55 to +150 Unit V V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings o... |
| Document |
 2SB817C Data Sheet
PDF 168.34KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB817 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB817 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SB817C |
Sanyo Electric |
PNP Epitaxial Planar Silicon Transistor |
|
| 4 | 2SB817C |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB817E |
TAITRON |
Power Transistor |
|