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Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions VCBO VCEO VEBO IC ICM Ptot Power Dissipation Derate above 25°C RθJC TJ, TSTG Thermal Resistance from Junction .
• 2SB817E transistor is designed for use in general purpose power amplifier, application
Mechanical Data
Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram
TO-3P
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions
VCBO VCEO VEBO IC ICM Ptot
Power Dissipat.
2SB817E - INCHANGE
··Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB817 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB817 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SB817C |
ON Semiconductor |
Bipolar Transistor |
|
| 4 | 2SB817C |
Sanyo Electric |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SB817C |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB810 |
NEC |
PNP SILICON TRANSISTOR |
|
| 7 | 2SB812 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB812 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB813 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB815 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SB815 |
ON Semiconductor |
Bipolar Transistor |
|
| 12 | 2SB815 |
Kexin |
Transistor |
|